Fabrication of n+ contact on p-type high pure Ge by cathodic electrodeposition of Li and impedance analysis of n+/p diode at low temperatures

TL;DR

This study demonstrates the fabrication of a stable n+ contact on p-type germanium using cathodic electrodeposition of lithium, and analyzes the diode's impedance behavior at low temperatures relevant for radiation detection.

Contribution

It introduces a novel lithium electrodeposition method to create n+ contacts on germanium and provides detailed impedance analysis of the resulting diode at various temperatures.

Findings

Li diffuses up to 500 microns in Ge after heat treatment.

The n+/p diode shows ideal characteristics with temperature-dependent impedance.

The diode's capacitance and impedance behavior vary with bias and frequency.

Abstract

Fabrication of diode by forming n-type electrical contact on germanium (Ge) and its AC impedance analysis is important for radiation detection in the form of pulses. In this work lithium (Li) metal has been electro-deposited on p-type Ge single crystal from molten lithium nitrate at 260{\deg}C. The depth of Li diffusion in Ge was successfully varied by changing the electroplating time as determined by sheet resistance (SR) measurement after successive lapping of Ge surface. Li is found to diffuse up to 500 micron inside Ge by heat treatment of as deposited Li/Ge at 350{\deg}C for 1 hour. A stable n-type electrical contact on Ge with SR ~1 ohm/square and impurity concentration ~3.7x10^15/cm^3 is developed by Li incorporation in p-type Ge crystal showing net carrier concentration ~3.4x10^10/cm^3 and SR ~100 Kohm/square. Acceptor concentration determined from the 1/C^2 vs V plot shows similar temperature dependence as found by Hall measurement. The fabricated n+/p junction exhibit ideal diode characteristics with gradual increase in cut off voltage at low temperatures. Under forward bias, junction capacitance mainly comprises of diffusion capacitance (~10 micro.F) showing strong frequency dependence and the impedance is partly resistive resulting in semicircular Cole-Cole plot. Imaginary impedance spectra reveal that the relaxation time for the diffusion of majority carriers decreases at higher temperatures and increased forward voltages. The diode is purely capacitive under reverse bias showing a line parallel to the y-axis in the Cole-Cole plot with frequency independent (100Hz-100MHz) depletion capacitance ~10pF.