Quantum criticality in coupled hybrid metal-semiconductor islands

TL;DR

This paper investigates quantum critical phenomena in a hybrid metal-semiconductor system influenced by Coulomb blockade and quantum Hall effects, revealing non-Fermi liquid behaviors and potential for quantum simulation of exotic states.

Contribution

It demonstrates how to realize and study quantum criticality, Kondo effect, and charge fractionalization in a tunable hybrid nanoelectronic setup, advancing quantum simulation capabilities.

Findings

Identification of quantum critical regime via gate voltages and contact resistances

Observation of robust non-Fermi liquid behaviors in the hybrid system

Potential for simulating exotic quantum phenomena in engineered circuits

Abstract

We show that the combined effects of dynamical Coulomb blockade and integer quantum Hall effect in a coupled hybrid metal-semiconductor setup provide a pathway for realizing resonant tunneling in Luttinger liquids. This hybrid setup can be brought to the quantum critical regime by varying gate voltages and contact resistances. We explore the nature of quantum criticality, Kondo effect, charge fractionalization and transport in such a hybrid setup, and verify their robust non-Fermi liquid behaviors. Our work opens a promising route for quantum simulating exotic zero temperature quantum critical phenomena associated with Luttinger liquid physics in a nanoengineered electronic circuit with well-defined quantum Hall channels.