Frequency-resolved Raman Thermometry Analysis via a Multi-layer Heat Transfer Model for Bulk and Low-dimensional Materials

TL;DR

This paper introduces a 3D analytical heat transfer model to analyze transient Raman thermometry signals, enabling faster and more efficient thermal property measurements of layered materials without finite element analysis.

Contribution

The work replaces finite element analysis with an analytical model for transient Raman thermometry, improving speed and efficiency in measuring thermal properties of layered materials.

Findings

Measured thermal conductivity of MoS2 and Bi2Se3 agrees with literature.

Quantitative sensitivity analysis provides insights for measurement improvements.

Method enables high throughput thermal property measurements.

Abstract

Raman thermometry is advantageous for measuring the thermal transport of low-dimensional materials due to its non-contact nature. Transient Raman methods have improved the accuracy of steady-state Raman thermometry by removing the need for accurate temperature calibration and laser absorption evaluation. However, current methods often resort to finite element analysis (FEA) to decipher the measured signals. This step is time-consuming and impedes its ubiquitous adaptation. In this work, we replace the FEA by fitting the transient-state Raman signal to a three-dimensional (3D) analytical heat transfer model for measuring the thermal conductivity of two bulk layered materials [i.e., molybdenum disulfide (MoS2) and bismuth selenide (Bi2Se3) crystals] and the interfacial thermal conductance (h) of CVD-grown MoS2 and molybdenum di-selenide (MoSe2) on quartz (SiO2). Our measured results agree reasonably well with literature and theoretical calculations. We also performed a quantitative sensitivity analysis to give insights on how to improve the measurement sensitivity. Our work provides an efficient way to process the data of transient-based Raman thermometry for high throughput measurements.