First results on monolithic CMOS detector with internal gain
U. Follo, G. Gioachin, C. Ferrero, M. Mandurrino, M. Bregant, S. Bufalino, F. Carnesecchi, D. Cavazza, M. Colocci, T. Corradino, M. Da Rocha Rolo, G. Di Nicolantonio, S. Durando, G. Margutti, M. Mignone, R. Nania, L. Pancheri, A. Rivetti, B. Sabiu, G. G. A. de Souza, S. Strazzi

TL;DR
This paper presents initial characterization results of a monolithic CMOS LGAD sensor with internal gain, demonstrating promising timing performance and guiding future design improvements for high-energy physics applications.
Contribution
It reports the first characterization of a monolithic LGAD CMOS prototype, including gain, timing resolution, and TCAD simulations for future sensor optimization.
Findings
Sensor internal gain of about 2.5
Timing resolution between 234 ps and 244 ps
TCAD simulations confirm gain and guide doping adjustments
Abstract
In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 m. This prototype is formed by a pixel array where each pixel has a total size of 100 m 250 m and includes a high-speed front-end amplifier. After describing the sensor and the electronics architecture, both laboratory and in-beam measurements are reported and described. Optical characterisations performed with an IR pulsed laser setup have shown a sensor internal gain of about 2.5. With the same experimental setup, the electronic jitter was found to be between 50 ps and 150 ps, depending on the signal amplitude. Moreover, the analysis of a test beam performed at the Proton Synchrotron (PS) T10 facility of CERN with 10 GeV/c protons and pions indicated that the…
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Taxonomy
TopicsCCD and CMOS Imaging Sensors · Particle Detector Development and Performance · Advancements in Semiconductor Devices and Circuit Design
