An antiferromagnetic diode effect in even-layered MnBi2Te4
Anyuan Gao, Shao-Wen Chen, Barun Ghosh, Jian-Xiang Qiu, Yu-Fei Liu,, Yugo Onishi, Chaowei Hu, Tiema Qian, Damien B\'erub\'e, Thao Dinh, Houchen, Li, Christian Tzschaschel, Seunghyun Park, Tianye Huang, Shang-Wei Lien, Zhe, Sun, Sheng-Chin Ho, Bahadur Singh, Kenji Watanabe

TL;DR
This paper demonstrates an antiferromagnetic diode effect in even-layered MnBi2Te4, revealing nonlinear transport phenomena and electrical sum-frequency generation, opening new avenues for AFM-based electronic and spintronic devices.
Contribution
It introduces the first observation of an AFM diode effect in a centrosymmetric material, showing how AFM order can induce diode-like behavior without charge separation.
Findings
Large second-harmonic transport observed in MnBi2Te4
Electrical sum-frequency generation demonstrated in the material
Potential for AFM logic and spintronics applications
Abstract
In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in…
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