Engineering nanowire quantum dots with iontronics

TL;DR

This paper introduces ion gating as a new method for engineering semiconductor quantum dots, enabling stable, high-quality quantum devices with simplified fabrication and improved control over quantum properties.

Contribution

The study presents ion gating as a novel paradigm for quantum dot engineering, allowing for reproducible, high-quality iontronic quantum dots without complex fabrication protocols.

Findings

Demonstrated Coulomb blockade in iontronic quantum dots

Controlled quantum dot properties via magnetic field dependence

Fabricated devices with two quantum dots in series

Abstract

Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of realization, scalability, and quantum transport properties. Here, we demonstrate a novel paradigm of semiconductor quantum dot engineering by exploiting ion gating. Our approach is found to enable the realization and control of a novel quantum dot system: the iontronic quantum dot. Clear Coulomb blockade peaks and their dependence on an externally applied magnetic field are reported, together with the impact of device architecture and confinement potential on quantum dot quality. Devices incorporating two identical quantum dots in series are realized, addressing the reproducibility of the developed approach. The iontronic quantum dot represents a novel class of zero-dimensional quantum devices engineered to overcome the need for thin dielectric layers, facilitating single-step device fabrication. Overall, the reported approach holds the potential to revolutionize the development of functional quantum materials and devices, driving rapid progress in solid state quantum technologies