Shadow Mask Molecular Beam Epitaxy for In-Plane Gradient Permittivity Materials
S. Mukherjee, S. R. Sitaram, X. Wang, and S. Law

TL;DR
This paper presents a scalable method to synthesize in-plane gradient permittivity materials using shadow mask molecular beam epitaxy, enabling compact infrared devices like miniature spectrometers with spatially varying permittivity.
Contribution
The authors demonstrate a novel, scalable synthesis technique for creating in-plane gradient permittivity materials via shadow mask molecular beam epitaxy.
Findings
Permittivity varies as a function of position in the plane.
Electric field enhancement observed with a wavenumber gradient of ~650-900 cm$^{-1}$.
Gradient regions develop on opposite sides of the material.
Abstract
Infrared spectroscopy currently requires the use of bulky, expensive, and/or fragile spectrometers. For gas sensing, environmental monitoring, or other applications in the field, an inexpensive, compact, robust on-chip spectrometer is needed. One way to achieve this goal is through gradient permittivity materials, in which the material permittivity changes as a function of position in the plane. In this paper, we demonstrate the synthesis of infrared gradient permittivity materials using shadow mask molecular beam epitaxy. The permittivity of our material changes as a function of position in the lateral direction, allowing us to confine varying wavelengths of infrared light at varying horizontal locations. We see an electric field enhancement corresponding to a wavenumber gradient of ~650 cm to 900 cm over an in-plane gradient width of ~13 m on the flat mesa of our…
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Taxonomy
TopicsNanowire Synthesis and Applications · Photocathodes and Microchannel Plates · GaN-based semiconductor devices and materials
