Pressure tuning of HgCdTe epitaxial layers -- the role of the highly disordered buffer layer

TL;DR

This study investigates how hydrostatic pressure affects HgCdTe epitaxial layers near the band inversion point, revealing that substrate influence on pressure coefficients is less significant than previously thought.

Contribution

It provides a comparative analysis of pressure effects on epitaxial and free-standing HgCdTe layers, challenging assumptions about substrate dominance in pressure response.

Findings

Pressure coefficients differ by less than 10% between epitaxial and free-standing layers.

Substrate influence on pressure coefficients is less significant than previously believed.

Deformation potentials are consistent within a 10% margin up to 4.2 kbar.

Abstract

HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states. Using alloys with x close to the concentration x_c at which the band inversion transition is observed and with additional application of hydrostatic pressure (p), one creates a favorable playground for studying the evolution of Dirac matter and its topological properties. In this work, cryogenic magnetospectroscopy in quantizing magnetic fields (B) at the far-infrared is used to study inter-Landau-level transitions in high-quality HgCdTe MBE-grown epitaxial layers with x ~ x_c as a function of p up to 4.2 kbar. Special attention is paid to elucidate the role of the substrate and buffer layers, which usually modify the pressure coefficients of epitaxial layers. For this purpose, comparative measurements were carried out on as-grown epilayers with a GaAs substrate and on free-standing layers obtained by etching off the substrate. Spectra registered as a function of B (at given p) were analyzed with the help of the Kane model modified to include magnetic field. The pressure coefficient as well as the difference between conduction and valence band deformation potentials of the free-standing layer were determined at 2 K. Surprisingly, the deformation potentials and pressure coefficients of the epitaxial layer and those of the free-standing layer differed by no more than 10 % in the pressure range up to 4.2 kbar. This finding questions the common belief of a dominant influence of the substrate on the pressure coefficients of epitaxial layers...