Design of a Modular GaN-based Three-Phase Three-Level ANPC Inverter
Angelo Di Cataldo, Hamed Eivazi, Giuseppe Aiello, Dario Patti, Giacomo, Scelba, Mario Cacciato, Francesco Gennaro

TL;DR
This paper details the design of a modular GaN-based three-phase three-level inverter for electric traction, including its architecture, gate driver, thermal management, and parasitic analysis, demonstrating its feasibility and modular advantages.
Contribution
It introduces a novel modular design of a GaN-based three-level inverter with detailed analysis and practical implementation aspects for electric traction applications.
Findings
Successful thermal and parasitic analysis using ANSYS Q3D.
Design of a 800 V, 11 kVA inverter with GaN transistors.
Feasibility demonstrated for electric traction systems.
Abstract
This paper presents the design of an 800 V 11 kVA three-level three-phase active neutral point clamped inverter, utilizing 650 V gallium nitride enhancement-mode high-electron-mobility transistors, to evaluate its feasibility in electric traction systems. The modular approach of the presented power converter design is detailed discussed and the different printed circuit boards composing the power converter are presented, together with critical design issues. The paper includes the gate driver design, as well as the thermal analysis and parasitics extraction using ANSYS Q3D. Extractor.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsSilicon Carbide Semiconductor Technologies · Multilevel Inverters and Converters · GaN-based semiconductor devices and materials
