Periodically Poled Aluminum Scandium Nitride Bulk Acoustic Wave Resonators and Filters for Communications in the 6G Era
Izhar, M. M. A. Fiagbenu, S. Yao, X. Du, P. Musavigharavi, Y. Deng, J., Leathersich, C. Moe, A. Kochhar, E. A. Stach, R. Vetury, and R. H. Olsson III

TL;DR
This paper presents high-frequency bulk acoustic wave resonators and filters using periodically poled aluminum scandium nitride films, achieving high quality factors and electromechanical coupling suitable for 6G communication systems.
Contribution
It introduces a novel 4-layer periodically poled AlScN film technique to enhance resonator performance beyond 8 GHz, outperforming traditional uniform polarization films.
Findings
Achieved a k_t^2 of 11.8% and Q_p of 236.6 at 17.9 GHz.
Fabricated filters with low insertion loss of 1.86 dB and 3.25 dB.
Demonstrated high linearity with IIP3 of +36 dBm and +40 dBm.
Abstract
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling (k_t^2) to form filters with low insertion loss and high selectivity. However, both the Q and k_t^2 of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high frequency (~17-18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a k_t^2 of 11.8% and a Q_p of 236.6 at the parallel resonance…
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Taxonomy
TopicsAcoustic Wave Resonator Technologies · GaN-based semiconductor devices and materials · Microwave Engineering and Waveguides
