Vertical CNT-Si Photodiode Array

TL;DR

This paper introduces a novel vertical CNT-Si photodiode array that leverages CNT electric field enhancement for improved optical coupling, reduced operating voltage, and faster response, enabling advanced imaging applications.

Contribution

It presents a new vertical CNT-Si photodiode structure with enhanced performance features over traditional planar designs.

Findings

Reduced operating voltage and response time.

Enhanced optical coupling and light trapping.

Potential for higher resolution and frame rate imaging.

Abstract

A photodiode consisting of nanopillars of thin-film silicon p-i-n on an array of vertically aligned carbon nanotubes (CNTs) with a noncontinuous cathode electrode is demonstrated. The structure exploits the intrinsic enhancement of the CNTs electric field, which leads to reduction in the photodiodes operating voltage and response time and enhancement of optical coupling due to better light trapping, as compared with the conventional planar photodiode. These improvements translate to higher resolution and higher frame rate flat-panel imaging systems for a broad range of applications, including computed tomography and particle detection.