Flexoelectricity in Amorphous Hafnium Oxide (HfO2)
Daniel Moreno-Garcia, Kaitlin M. Howell, Luis Guillermo Villanueva

TL;DR
This paper presents a novel method to measure flexoelectricity accurately in amorphous HfO2, establishing the first such measurement in an amorphous material and revealing a quadratic relationship with permittivity.
Contribution
It introduces a groundbreaking technique to isolate flexoelectric effects from other phenomena and provides the first measurement of flexoelectricity in amorphous hafnium oxide.
Findings
Measured a flexoelectric coefficient of 105 ± 10 pC/m in amorphous HfO2
Revealed a quadratic relationship between flexoelectric coefficient and permittivity
Demonstrated a detection threshold below 1 fC/m
Abstract
Flexoelectricity, inherent in all materials, offers a promising alternative to piezoelectricity for nanoscale actuation and sensing. However, its widespread application faces significant challenges: differentiating flexoelectric effects from those of piezoelectricity and other phenomena, verifying its universality across all material structures and thicknesses, and establishing a comprehensive database of flexoelectric coefficients across different materials. This work introduces a groundbreaking methodology that accurately isolates flexoelectricity from piezoelectric, electrostrictive and electrostatic effects, with a detection threshold extending below 1 fC/m. The robustness of this method is demonstrated through its application to amorphous hafnium oxide (HfO), successfully measuring a flexoelectric coefficient of 105 10 pC/m. This measurement signifies the first…
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Nonlocal and gradient elasticity in micro/nano structures · Quantum-Dot Cellular Automata
