Cryogenic Compact Low-Power 60GHz Amplifier for Spin Qubit Control in Monolithic Silicon Quantum Processors

TL;DR

This paper presents a cryogenic, low-power 60GHz amplifier designed for spin qubit control in silicon quantum processors, demonstrating high gain, broad bandwidth, and compact size at 2 K.

Contribution

It introduces a novel inductorless amplifier topology optimized for cryogenic conditions, suitable for integration in monolithic silicon quantum computing systems.

Findings

Achieves 15 dB gain at 59 GHz

Operates with 2.16 mW power consumption at 2 K

Features a compact 0.18 x 0.19 mm2 core area

Abstract

This paper reports the design and experimental characterization of a cryogenic compact low-power 60GHz amplifier for control of electron/hole spin qubits, as elementary building block for monolithic Si quantum processors. Tested at 2 K, the amplifier exhibits S21 of 15 dB at 59 GHz, BW3dB of 52.5-67.5 GHz, and power consumption of 2.16 mW. Owing to the topology with inductorless active network, the amplifier has a compact core area of 0.18 x 0.19 mm2.