Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors

TL;DR

This paper presents a cryogenically tested, compact mm-wave SPST switch in 22nm FDSOI CMOS, achieving low loss and high isolation without large passive components, suitable for monolithic quantum processors.

Contribution

It introduces a novel compact mm-wave switch design in 22nm FDSOI CMOS optimized for cryogenic temperatures, with improved performance over prior wideband switches.

Findings

Insertion loss below 2.3 dB from DC to 70 GHz

Isolation better than 25.3 dB across the frequency range

Return loss better than -11.5 dB from DC to 70 GHz

Abstract

This paper reports the experimental characterization at the cryogenic temperature of a compact mm-wave broadband single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch consists of two n-MOSFETs with a special device option to reduce the substrate parasitic effects, and a third n-MOSFET to improve isolation. Unlike prior wideband mm-wave switches, it does not require any large passive components, allowing a very compact design, low loss and high isolation performance. The cryogenic measurements at 2 K show an insertion loss lower than 2.3 dB, an isolation better than 25.3 dB, and the return loss better than -11.5 dB, over the entire frequency range from DC to 70 GHz.