Synergetic effect of edge states and point defects to tune ferromagnetism in CVD-grown vertical nanostructured MoS2: A correlation between electronic structure and theoretical study
Sharmistha Dey, Pankaj Srivastava, Ankita Phutela, Saswata, Bhattacharya, Fouran Singh, and Santanu Ghosh

TL;DR
This study investigates how edge states and point defects in nanostructured MoS2 influence room-temperature ferromagnetism, revealing that defect engineering via ion irradiation modulates magnetic properties linked to electronic structure changes.
Contribution
It provides a combined experimental and theoretical analysis of defect-induced ferromagnetism in MoS2, highlighting the role of edge states and oxygen incorporation in magnetic tuning.
Findings
Pristine MoS2 nanosheets exhibit high magnetization of 1.7 emu/g.
Ion irradiation reduces vertical nanosheet integrity and magnetic moment.
Oxygen incorporation at sulfur vacancies alters electronic states and decreases magnetism.
Abstract
Room-temperature ferromagnetism (RTFM) exhibited by nanostructured two-dimensional semiconductors for spintronics applications is a fascinating area of research. The present work reports on the correlation between the electronic structure and magnetic properties of defect-engineered nano-structured MoS2 thin films. Low-energy light and heavy-mass ion irradiation have been performed to create defects and tune magnetic properties. Vertical nanosheets with edge state termination in the pristine sample have been examined by field emission scanning electron microscopy (FESEM). Deterioration of vertical nanosheets is observed in low-energy Ar+ and Xe+ irradiated samples. An appreciably high magnetization value of 1.7 emu/g was observed for edge-oriented nanostructured pristine MoS2 thin films, which decreased after ion irradiation. From X-ray photoelectron spectroscopy (XPS) data, it is…
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Taxonomy
TopicsZnO doping and properties · 2D Materials and Applications · Electronic and Structural Properties of Oxides
