Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

TL;DR

This study investigates how pulse laser annealing improves the crystallinity and electrical properties of GeSn and GeSiSn thin films on SOI substrates, enhancing their potential for optoelectronic applications.

Contribution

It demonstrates that pulse laser annealing can significantly enhance the crystallinity and electrical properties of GeSn and GeSiSn thin films on SOI substrates.

Findings

Increased XRD reflection intensity indicating improved crystallinity

Enhanced active carrier concentrations up to 4x10^19 cm^-3

Material becomes single-crystalline after annealing

Abstract

Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseudomorphic growth of Si1-x-yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, X-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4x1019 cm-3.