Pushing an Altermagnet to the Ultimate 2D Limit: Evidence of Symmetry Breaking in Monolayers of GdAlSi
Oleg E. Parfenov, Dmitry V. Averyanov, Ivan S. Sokolov, Alexey N., Mihalyuk, Oleg A. Kondratev, Alexander N. Taldenkov, Andrey M. Tokmachev,, Vyacheslav G. Storchak

TL;DR
This study investigates the evolution of GdAlSi altermagnet properties from bulk to monolayer, revealing symmetry breaking and emergent phenomena like anomalous Hall effect in ultrathin films, advancing 2D spintronics research.
Contribution
First experimental demonstration of symmetry breaking and electronic property transformation in monolayer GdAlSi altermagnet, bridging 3D and 2D regimes.
Findings
Thick films show negative magnetoresistance linked to chiral anomaly.
Ultrathin films exhibit spontaneous anomalous Hall effect.
Dimensionality induces symmetry breaking affecting electronic states.
Abstract
Altermagnets have emerged as a class of materials combining certain ferromagnetic properties with zero net magnetization. This combination is highly promising for spintronics, especially if a material can be brought to a nanoscale size. However, experimental studies of the 2D limit of altermagnets and evolution of their properties with thickness are lacking. Here, we study epitaxial films on silicon of the Weyl altermagnet GdAlSi ranging from more than a hundred unit cells to a single unit cell. The films are synthesized by molecular beam epitaxy and, expectedly, do not show any discernible net magnetic moments. Electron transport studies reveal a remarkable transformation of the electron state with the film thickness. Thick films exhibit negative longitudinal magnetoresistance associated with the chiral anomaly but do not demonstrate altermagnetic properties in electron transport due…
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Taxonomy
TopicsMagnetic properties of thin films · Quantum and electron transport phenomena · Advanced Chemical Physics Studies
