The first-order structural phase transition at low-temperature in GaPt$_{5}$P and its rapid enhancement with pressure
A. Sapkota, T. J. Slade, S. Huyan, N. K. Nepal, J. M. Wilde, N., Furukawa, S. H. Laupidus, L.-L. Wang, S. L. Bud'ko, P. C. Canfield

TL;DR
This study uncovers a first-order structural phase transition in GaPt$_{5}$P at low temperatures, which is highly sensitive to pressure, with the transition temperature rapidly increasing under pressure, unlike its Al and In counterparts.
Contribution
It reports the discovery of a pressure-sensitive, first-order structural phase transition in GaPt$_{5}$P, a phenomenon not observed in similar compounds, and provides detailed experimental and theoretical insights.
Findings
GaPt$_{5}$P exhibits a step-like transition at 70-90 K.
The transition involves a volume collapse and symmetry change.
Pressure increases the transition temperature, reaching room temperature at ~2.2 GPa.
Abstract
Single crystals of XPtP (X = Al, Ga, and In) were grown from a Pt-P solution at high temperatures, and ambient-pressure measurements of temperature-dependent magnetization, resistivity, and X-ray diffraction were made. Also, the ambient-pressure Hall resistivity and temperature-dependent resistance under pressure were measured on GaPtP. All three compounds have tetragonal crystal structure at room-temperature with metallic transport and weak diamagnetism over the ~K temperature range. Surprisingly, at ambient pressure, both the transport and magnetization measurements on GaPtP show a step-like feature in ~K region suggesting a possible structural phase transition, and no such features were observed in (Al/In)PtP. Both the hysteretic nature and sharpness of the feature suggest the first-order transition, and single-crystal X-ray diffraction…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Acoustic Wave Resonator Technologies · Optical properties and cooling technologies in crystalline materials
