Large Out-of-Plane Piezoelectric Effect in Janus Ferromagnetic Semiconductor Monolayer of CrOFBr
Qiuyue Ma, Guochun Yang, Busheng Wang, Yong Liu

TL;DR
This study reveals that Janus CrOFBr monolayer exhibits significant out-of-plane piezoelectricity and ferromagnetism, with strain-tunable responses surpassing many 2D materials, promising for nanoelectronics and spintronics.
Contribution
First-principles calculations demonstrate that Janus CrOFBr monolayer has intrinsic ferromagnetic semiconducting behavior with large, strain-enhanced out-of-plane piezoelectric effects, advancing 2D multifunctional material design.
Findings
Out-of-plane piezoelectric coefficients up to 1.21 and 0.63 pm/V.
Tensile strain increases piezoelectric response by 27% and 67%.
Piezoelectric response correlates with electronegativity difference.
Abstract
The exploitation of piezoelectric ferromagnetism (PFM) in two-dimensional (2D) materials with large out-of-plane piezoelectric response is motivated not only by technological applications but also scientific interest. In this study, the CrONM monolayer family (N=F, Cl; M=Br, Cl) was investigated using first-principles calculations, revealing that the Janus CrOFBr monolayer exhibits intrinsic ferromagnetic semiconductor behavior along with a significant out-of-plane piezoelectric effect. The calculated out-of-plane piezoelectric strain coefficients d and d are up to 1.21 and 0.63 pm/V, respectively. These values are greater than those of the majority of 2D materials. Furthermore, our findings demonstrate that applying tensile strain can enhance the out-of-plane piezoelectric response, leading to a respective 27% and 67% augmentation in the piezoelectric strain coefficients…
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Taxonomy
Topics2D Materials and Applications · Heusler alloys: electronic and magnetic properties
