The regulation of symmetry-breaking-dependent electronic structures in ReSeS monolayer
Texture Lin

TL;DR
This paper investigates the electronic structures of ReSeS monolayer with low symmetry, analyzing how geometric deformation affects its bandgap and exploring phase transitions, with implications for electronic and optical device applications.
Contribution
It introduces two models explaining bandgap reduction under deformation and discusses the phase transition to a metallic state in ReSeS monolayer.
Findings
Bandgap decreases with geometric deformation.
Proposed models explain the saturation effect on bandgap.
ReSeS shows potential for electronic and optical devices.
Abstract
Due to the excellent physical properties, two dimensional materials have attracted widespread attention from researchers. In this article, we discuss a transition metal dichalcogenide, ReSeS monolayer with 1T" phase, with extremely low symmetry through the first principles calculation. It belongs to the space group P1 and has Jauns structure. Due to the broken of the central inversion symmetry. Raman and infrared active modes in the vibrational spectrum no longer mutually exclusive, which has become a spectral fingerprint of this material. First principles calculation indicates that the bandgap decreases when the material has geometric deformation, and we propose two models to explain this phenomenon and provide the physical pictures. The first model requires constructing a low symmetry Wannier analytically simplify Hamiltonian to obtain 4 energy levels of mixed orbital, Then the…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · 2D Materials and Applications · Advanced Thermoelectric Materials and Devices
