Systematic Modulation of Charge and Spin in Graphene Nanoribbons on MgO

TL;DR

This study demonstrates precise control of charge and spin states in graphene nanoribbons on MgO substrates, enabling potential applications in quantum sensing and processing by exploiting their intrinsic electronic properties.

Contribution

It introduces a systematic method to modulate charge and spin in graphene nanoribbons via substrate engineering, revealing discrete charge states and magnetic properties.

Findings

GNRs host integer electron charges depending on length and shape.

Alternation between non-magnetic and paramagnetic states based on electron occupation.

Spectral evidence of Coulomb correlation gap in odd electron cases.

Abstract

Graphene nanostructures can be engineered with atomic precision to display customized electronic states with application in spintronics or quantum technologies. In order to take advantage of their full potential, their charge and spin state must be precisely controlled. Graphene systems exchange charge to reach thermodynamic equilibrium with their environment, requiring external gating potentials to tune their ground state. Alternative strategies like intrinsic doping or substrate modifications provided small variations of their equilibrium charge and poor control over their spin. Here, we show systematic manipulation of the electron occupation in graphene nanoribbons (GNRs) laying on MgO layers grown on Ag(001). Owing to the extraordinary decoupling properties of MgO, and the electropositive character of the substrate, GNRs are found to host an integer number of electron charges that depend on their length and shape. This results in the alternation between a non-magnetic closed-shell state and an open-shell paramagnetic system for even and odd electron occupations respectively. For the odd case, we found the spectral fingerprint of a narrow Coulomb correlation gap, which is the smoking gun of its spin 1/2 paramagnetic state. Comparisons of scanning tunnelling microscopy (STM) data with mean-field Hubbard (MFH) simulations confirm the practical discretization of the GNR electronic states and point to charge excess of up to 19 electrons in a single ribbon. We anticipate that GNRs supported by MgO ultra-thin insulating films can open the door to customized devices for quantum sensing and quantum processing applications..