Electron Confinement-Induced Plasmonic Breakdown in Metals

TL;DR

This study demonstrates that reducing the thickness of hafnium nitride films causes electron confinement effects that break down plasmon resonance, leading to a metal-insulator transition with implications for photonic devices.

Contribution

It provides experimental evidence of plasmonic breakdown due to electron confinement in ultrathin metals, challenging classical models and revealing a transition to dielectric behavior.

Findings

Plasmon resonance diminishes as film thickness decreases.

Electron confinement causes spatial dispersion of plasma frequency.

Ultrathin HfN films transition from metal to dielectric.

Abstract

Plasmon resonance in metals represents the collective oscillation of the free electron gas density and enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the classical Drude model describes the plasmonic excitation, wherein the plasma frequency exhibits no spatial dispersion. Here, we show conclusive experimental evidence of the breakdown of the plasmon resonance and a consequent photonic metal-insulator transition in an ultrathin archetypal refractory plasmonic material, hafnium nitride (HfN). Epitaxial HfN thick films exhibit a low-loss and high-quality Drude-like plasmon resonance in the visible spectral range. However, as the film thickness is reduced to nanoscale dimensions, the Coulomb interaction among electrons increases due to the electron confinement, leading to the spatial dispersion of the plasma frequency. Importantly, with the further decrease in thickness, electrons lose their ability to shield the incident electric field, turning the medium into a dielectric. The breakdown of the plasmon resonance in epitaxial ultrathin metals could be useful for fundamental physics studies in transdimensional regimes and novel photonic device applications.