Engineering second-order topological insulators via coupling two first-order topological insulators

TL;DR

This paper proposes a theoretical method to create two-dimensional second-order topological insulators with corner states by coupling two first-order topological insulators, applicable to various models and leading to novel 3D topological phases.

Contribution

It introduces a versatile interlayer coupling strategy to engineer second-order topological insulators and semimetals, expanding the design principles for higher-order topological phases.

Findings

Corner states emerge from interlayer coupling of topological insulators.

Stacked systems form second-order nodal ring semimetals and Dirac semimetals.

The approach is demonstrated on multiple models including Kane-Mele and BHZ.

Abstract

We theoretically investigate the engineering of two-dimensional second-order topological insulators with corner states by coupling two first-order topological insulators. We find that the interlayer coupling between two topological insulators with opposite topological invariants results in the formation of edge-state gaps, which are essential for the emergence of the corner states. Using the effective Hamiltonian framework, We elucidate that the formation of topological corner states requires either the preservation of symmetry in the crystal system or effective mass countersigns for neighboring edge states. Our proposed strategy for inducing corner state through interlayer coupling is versatile and applicable to both $\mathbb{Z}_2$ topological insulators and quantum anomalous Hall effects. We demonstrate this approach using several representative models including the seminal Kane-Mele model, the Bernevig-Hughes-Zhang model, and the Rashba graphene model to explicitly exhibit the formation of corner states via interlater coupling. Moreover, we also observe that the stacking of the coupled $\mathbb{Z}_2$ topological insulating systems results in the formation of the time-reversal invariant three-dimensional second-order nodal ring semimetals. Remarkably, the three-dimensional system from the stacking of the Bernevig-Hughes-Zhang model can be transformed into second-order Dirac semimetals, characterized by one-dimensional hinge Fermi arcs. Our strategy of engineering second-order topological phases via simple interlayer coupling promises to advance the exploration of higher-order topological insulators in two-dimensional spinful systems.