Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride
J. Plo, A. Pershin, S. Li, T. Poirier, E. Janzen, H. Schutte, M. Tian,, M. Wynn, S. Bernard, A. Rousseau, A. Ibanez, P. Valvin, W. Desrat, T. Michel,, V. Jacques, B. Gil, A. Kaminska, N. Wan, J. H. Edgar, A. Gali, and G., Cassabois

TL;DR
This paper introduces a methodology combining isotope substitution and polytype control to identify point defects in hexagonal boron nitride, exemplified by identifying a carbon dimer ultraviolet color center through experiments and first-principles calculations.
Contribution
The study presents a novel approach for defect identification in 2D materials by integrating isotope and polytype manipulation with systematic experimental and theoretical analysis.
Findings
Uncovered a local vibrational mode linked to a carbon-based defect.
Demonstrated isotope-selective doping confirms the defect as a carbon center.
Showed different optical responses in various polytypes help identify defect structures.
Abstract
Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the development of novel materials. Whatever the research perspective, the identification of defects is a key but complicated, and often long-standing issue. Here, we present a general methodology to identify point defects by combining isotope substitution and polytype control, with a systematic comparison between experiments and first-principles calculations. We apply this methodology to hexagonal boron nitride (hBN) and its ubiquitous color center emitting in the ultraviolet spectral range. From…
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Taxonomy
TopicsCultural Heritage Materials Analysis
