Strain-Induced Changes of Electronic and Optical Properties of Zr-based MXenes
Ji\v{r}\'i Kalm\'ar, Franti\v{s}ek Karlick\'y

TL;DR
This study uses advanced theoretical methods to predict that Zr-based MXenes can transition from semiconductors to conductors under strain and exhibit high optical absorption, highlighting their potential in electronic and photonic applications.
Contribution
First comprehensive theoretical prediction of semiconducting Zr-based MXenes and their strain-induced electronic and optical property changes using hybrid DFT, GW, and BSE methods.
Findings
Seven Zr-based MXenes identified as semiconductors or conductors.
Strain induces semiconductor-to-conductor transition in these MXenes.
High optical absorption efficiency (20-30%) in visible range for semiconducting MXenes.
Abstract
Zr-based MXenes recently attracted attention because of its experimental preparation showing temperature stability, mechanical strength, and promising energy, sensoric, and electrochemistry applications. However, necessary theoretical predictions at a precise/predictive level are complicated due to essential excitonic features and strong electron correlation (i.e., a necessity to go beyond standard density functional theory, DFT). Contrary to the prevailing focus on oxygen-terminated MXenes and standard predictions of other Zr-based MXenes as conductors, based on the hybrid DFT and GW many-body perturbational theory, we were able to find seven different semiconductors (five of them for their equilibrium geometry and two others under slight tensile biaxial strain) in the case of two- and three-layered ZrCT and ZrCT configurations with various terminations (T = O, F,…
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