Photonic bilayer Chern insulator with corner states
Subhaskar Mandal, Ziyao Wang, Rimi Banerjee, Hau Tian Teo, Peiheng, Zhou, Xiang Xi, Zhen Gao, Gui-Geng Liu, and Baile Zhang

TL;DR
This paper demonstrates a photonic bilayer Chern insulator where interlayer coupling induces a topological phase transition, leading to gapped edge states and the emergence of robust corner states with potential for defect-resistant photonic applications.
Contribution
First experimental realization of a bilayer gyromagnetic photonic crystal showing a transition from Chern insulator to higher-order topological phase with corner states.
Findings
Interlayer coupling causes a topological phase transition.
Corner states emerge within the bandgap.
Corner states show high resilience to defects.
Abstract
Photonic Chern insulators can be implemented in gyromagnetic photonic crystals with broken time-reversal (TR) symmetry. They exhibit gapless chiral edge states (CESs), enabling unidirectional propagation and demonstrating exceptional resilience to localization even in the presence of defects or disorders. However, when two Chern insulators with opposite Chern numbers are stacked together, this one-way nature can be nullified, causing the originally gapless CESs to become gapped. Recent theoretical works have proposed achieving such a topological phase transition in condensed matter systems using antiferromagnetic thin films such as MnBi2Te4 or by coupling two quantum spin/anomalous Hall insulators, but these approaches have yet to be realized experimentally. In a bilayer gyromagnetic photonic crystal arranged in an antiferromagnetic layer configuration, our experimental observations…
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Taxonomy
TopicsPhotonic Crystals and Applications · Photonic and Optical Devices · Quantum optics and atomic interactions
