Room Temperature Ferroelectricity and Electrically Tunable Berry Curvature Dipole in III-V Monolayers

TL;DR

This study predicts room temperature ferroelectricity in III-V monolayers using first-principles calculations, revealing their potential for flexible electronics and memory devices with tunable electronic properties.

Contribution

First demonstration of room temperature ferroelectricity and electrically tunable Berry curvature in III-V monolayer materials.

Findings

Out-of-plane polarization ranges from 9.48 to 13.96 pC/m.

Berry curvature dipole and nonlinear Hall effect are tunable by electric field.

High tunneling electroresistance in ferroelectric tunnel junctions, especially in InP.

Abstract

Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC/m, outperforming most known 2D ferroelectric. We demonstrate electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance. Our findings motivate further exploration of these monolayers for studying the interplay between Berry curvature and ferroelectricity and for integrating these ferroelectric monolayers in next-generation electronic devices.