Light-induced topological phase transition with tunable layer Hall effect in axion antiferromagnets

TL;DR

This paper proposes using circularly polarized light to induce topological phase transitions in axion antiferromagnets, enabling tunable quantum anomalous Hall states and revealing layer-resolved Hall effects with potential spintronics applications.

Contribution

It introduces a theoretical and computational framework for light-induced topological phase control in MnBi2Te4 thin films, including tunable Chern numbers and layer-specific Hall effects.

Findings

Light can transform axion insulators into quantum anomalous Hall states.

Layer Hall effects can be spatially manipulated via Floquet engineering.

Magnetic proximity effects influence Hall conductance localization.

Abstract

The intricate interplay between light and matter provides effective tools for manipulating topological phenomena. Here, we theoretically propose and computationally show that circularly polarized light hold the potential to transform the axion insulating phase into quantum anomalous Hall state in MnBi2Te4 thin films, featuring tunable Chern numbers (ranging up to 2). In particular, we reveal the spatial rearrangement of the hidden layer-resolved anomalous Hall effect under light driven Floquet-engineering. Notably, upon Bi2Te3 layer intercalation, the anomalous Hall conductance predominantly localizes in the nonmagnetic Bi2Te3 layers that hold zero Berry curvature in the intact state, suggesting significant magnetic proximity effect. Additionally, we estimate variations in the magneto-optical Kerr effect, giving a contactless method for detecting topological transitions. Our work not only presents a strategy to investigate emergent topological phases, but also sheds light on the possible applications of the layer Hall effect in topological antiferromagnetic spintronics.