Batch VUV4 Characterization for the SBC-LAr10 scintillating bubble chamber
H. Hawley-Herrera, E. Alfonso-Pita, E. Behnke, M. Bressler, B., Broerman, K. Clark, J. Corbett, C.E. Dahl, K. Dering, A. de St. Croix, D., Durnford, P. Giampa, J. Hall, O. Harris, N. Lamb, M. Laurin, I. Levine, W.H., Lippincott, X. Liu, N. Moss, R. Neilson, M.-C. Piro, D. Pyda

TL;DR
This paper details the characterization of VUV4 SiPMs for the SBC-LAr10 bubble chamber, focusing on temperature-dependent parameters critical for optimizing detector performance.
Contribution
It introduces a novel dark-count characterization technique and an analysis framework for precise measurement of SiPM parameters across temperatures.
Findings
VBD temperature coefficient of 56±2 mV/K
DCR reduces by a factor of 7 for every 20 K decrease
P_CA increases by approximately 4000 ppm/K
Abstract
The Scintillating Bubble Chamber (SBC) collaboration purchased 32 Hamamatsu VUV4 silicon photomultipliers (SiPMs) for use in SBC-LAr10, a bubble chamber containing 10~kg of liquid argon. A dark-count characterization technique, which avoids the use of a single-photon source, was used at two temperatures to measure the VUV4 SiPMs breakdown voltage (), the SiPM gain (), the rate of change of with respect to voltage (), the dark count rate (DCR), and the probability of a correlated avalanche (P) as well as the temperature coefficients of these parameters. A Peltier-based chilled vacuum chamber was developed at Queen's University to cool down the Quads to ~K and ~K with average stability of ~mK. An analysis framework was developed to estimate to tens of mV precision and DCR…
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