Raman analysis of the dehydrogenation process of hydrogenated monolayer graphene

TL;DR

This study uses Raman spectroscopy to analyze the stability and defect evolution of hydrogenated and etched monolayer graphene under various annealing conditions up to 400°C, providing insights into defect types and stability thresholds.

Contribution

It offers a detailed Raman-based characterization of dehydrogenation processes in monolayer graphene, highlighting stability conditions and defect transformations during annealing.

Findings

Hydrogenated graphene remains stable below 300°C.

Etched graphene remains stable up to 400°C with defect modifications.

Raman ID/ID' ratio effectively identifies defect types.

Abstract

Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or hydrogenated graphene is crucial for application, as processing conditions (e.g. temperature) and quality control (characterization) conditions may result in modifying the material through partial or full dehydrogenation, and subsequent alteration of its electronic properties. This work reports a study of various dehydrogenation conditions of hydrogenated or hydrogen-etched monolayer graphene (1LG), either free-standing or supported by an interferential (SiO2/Si) substrate, using incremental annealing under nitrogen atmosphere up to 400 {\textdegree}C. Materials were investigated by Raman spectroscopy. Indeed, it has been known since 2012 that the intensity ratio of two Raman bands activated by double resonance, D over D' (ID/ID') can be used to identify the type of defects in defective graphene. It is shown that hydrogenated 1LG, characterized by a large ID/ID' ratio (~9-15), is stable provided annealing remains below 300 {\textdegree}C. On the other hand, defective 1LG resulting from hydrogen etching remains stable up to 400 {\textdegree}C, whether the 1LG is hydrogenated on one side or both sides, while a modification in the type and proportions of defects is likely. Experimental conditions for the safe use of Raman spectroscopy, otherwise able to induce specimen overheating because of the laser energy and power, are also determined and discussed.