Near IR bandgap semiconductive 2D conjugated metal-organic framework with rhombic lattice and high mobility

TL;DR

This paper reports the design and synthesis of a novel 2D conjugated metal-organic framework with a rhombic lattice, exhibiting a near IR bandgap, high mobility, and potential for electronic applications.

Contribution

It introduces the first 2D c-MOF with a rhombic lattice and high mobility, expanding the class of semiconducting 2D c-MOFs with larger band gaps.

Findings

Achieved a 2D c-MOF with a 0.50 eV band gap

Demonstrated high electrical conductivity of 0.10 S/cm

Observed high charge carrier mobility of 10.0 cm²V⁻¹s⁻¹

Abstract

Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of 2D electronic materials. However, intrinsically semiconducting 2D c-MOFs with gaps in the Vis-NIR and high charge carrier mobility have been rare. Most of the reported semiconducting 2D c-MOFs are metallic (i.e. gapless), which limits their use in applications where larger band gaps are needed for logic devices. Herein, we design a new D2h-geometric ligand, 2,3,6,7,11,12,15,16-octahydroxyphenanthro(9,10b)triphenylene (OHPTP), and synthesize the first example of a 2D c-MOF single crystal (OHPTP-Cu) with a rhombohedral pore geometry after coordination with copper. The continuous rotation electron diffraction (cRED) analysis unveils the orthorhombic crystal structure at the atomic level with a unique AB layer stacking. The resultant Cu2(OHPTP) is a p-type semiconductor with an indirect band gap of about 0.50 eV and exhibits high electrical conductivity of 0.10 S cm-1 and high charge carrier mobility of 10.0 cm2V-1s-1. Density-functional theory calculations underline the predominant role of the out-of-plane charge transport in this semiquinone-based 2D c-MOFs.