Imaging topological polar structures in marginally twisted 2D semiconductors
Thi-Hai-Yen Vu, Daniel Bennett, Gayani Nadeera Pallewella, Johnathon Maniatis, Josh Edwards, Md Hemayet Uddin, Kaijian Xing, Pablo Resendiz-Vazquez, Seng Huat Lee, Zhiqiang Mao, Jack B. Muir, Linnan Jia, Jeffrey A. Davis, Kenji Watanabe, Takashi Taniguchi, Shaffique Adam

TL;DR
This paper uses advanced microscopy to visualize and differentiate topological polar structures in twisted bilayer WSe2, revealing how twist and strain influence the formation of non-trivial meron/antimeron nanostructures in 2D semiconductors.
Contribution
It provides the first experimental visualization of topologically non-trivial meron structures in marginally twisted 2D heterostructures, distinguishing effects of twist and strain.
Findings
Observation of both Bloch-type and Neel-type merons
Differentiation between twist-induced and strain-induced moire superlattices
Experimental proof of topologically non-trivial polar nanostructures
Abstract
Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-of-plane polarization. However, understanding the individual contributions of twist and strain to the formation of topological polar nanostructures remains to be established and has proven to be experimentally challenging. Inversion symmetry breaking has been predicted to give rise to an in-plane component of polarization along the domain walls, leading to the formation of a network of topologically non-trivial merons (half-skyrmions) that are Bloch-type for twisted and Neel-type for strained…
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Taxonomy
TopicsQuantum and electron transport phenomena · Physics of Superconductivity and Magnetism · Topological Materials and Phenomena
