The formation of a nuclear-spin dark state in silicon

TL;DR

This paper reports the experimental observation of a nuclear-spin dark state in silicon quantum dots, which reduces electron-nuclear coupling and electronic spin relaxation, with potential applications in quantum memory and sensing.

Contribution

First demonstration of a nuclear-spin dark state in silicon quantum dots, showing reduced coupling and relaxation, advancing quantum information applications.

Findings

Transverse electron-nuclear coupling diminishes in the dark state

Dark state depends on synchronized nuclear spin precession

Significant reduction in electronic spin relaxation rate

Abstract

Silicon-based qubits are often made by trapping individual electrons in quantum dots defined by electric gates. Quantum information can then be stored using the spin states of the electrons. However, the nuclei of the surrounding atoms also have spin degrees of freedom that couple to the electron spin qubits and cause decoherence. The emergence of a nuclear-spin dark state has been predicted to reduce this coupling during dynamic nuclear polarization, when the electrons in the quantum dot drive the nuclei in the semiconductor into a decoupled state. Here, we report the formation of a nuclear-spin dark state in a gate-defined silicon double quantum dot. We show that, as expected, the transverse electron-nuclear coupling rapidly diminishes in the dark state, and that this state depends on the synchronized precession of the nuclear spins. Moreover, the dark state significantly reduces the relaxation rate between the singlet and triplet electronic spin states. This nuclear-spin dark state has potential applications as a quantum memory or in quantum sensing, and might enable increased polarization of nuclear spin ensembles.