Impurity-level induced broadband photoelectric response in wide-band semiconductor SrSnO3

TL;DR

This paper demonstrates a novel impurity-level engineering method in SrSnO3 to achieve broadband photoelectric detection with high responsivity and stability, offering a simple, low-cost alternative for multispectral imaging and optical communication applications.

Contribution

It introduces a new impurity-level approach in SrSnO3 for broadband detection, overcoming stability and manufacturing challenges of existing materials.

Findings

Achieves over 200 mA/W responsivity at UV wavelengths

Demonstrates stable broadband response under prolonged exposure

Proposes a simple, low-cost photodetector design

Abstract

Broadband spectrum detectors exhibit great promise in fields such as multispectral imaging and optical communications. Despite significant progress, challenges like materials instability, complex manufacturing process and high costs still hinder further application. Here we present a method that achieves broadband spectral detect by impurity-level in SrSnO3. We report over 200 mA/W photo-responsivity at 275 nm (ultraviolet C solar-bind) and 367 nm (ultraviolet A) and ~ 1 mA/W photo-responsivity at 532 nm and 700 nm (visible) with a voltage bias of 5V. Further transport and photoluminescence results indicate that the broadband response comes from the impurity levels and mutual interactions. Additionally, the photodetector demonstrates excellent robustness and stability under repeated tests and prolonged exposure in air. These findings show the potential of SSO photodetectors and propose a method to achieve broadband spectrum detection, creating new possibility for the development of single-phase, low-cost, simple structure and high-efficiency photodetectors.