Engineering band structures of two-dimensional materials with remote moire ferroelectricity
Jing Ding, Hanxiao Xiang, Wenqiang Zhou, Naitian Liu, Xinjie Fang,, Kangyu Wang, Linfeng Wu, Kenji Watanabe, Takashi Taniguchi, Shuigang Xu

TL;DR
This paper demonstrates how remote moire ferroelectricity in twisted bilayer WSe2 can engineer band structures in adjacent graphene layers, enabling tunable electronic properties through long-range electrostatic potentials.
Contribution
It introduces a novel approach to engineer 2D material band structures using remote moire ferroelectricity, separating the moire layer from the electronic transport layer.
Findings
Remote moire potential induces satellite resistance peaks in graphene.
Ferroelectric hysteresis observed at finite displacement fields.
Twist angle controls the strength of the moire potential.
Abstract
The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry breaking in rhombohedral-stacked transitional metal dichalcogenides (TMDCs) endows them with an interfacial ferroelectricity associated with an out-of-plane electric polarization. By utilizing twist angle as a knob to construct rhombohedral-stacked TMDCs, antiferroelectric domain networks with alternating out-of-plane polarization can be generated. Here, we demonstrate that such spatially periodic ferroelectric polarizations in parallel-stacked twisted WSe2 can imprint their moire potential onto a remote bilayer graphene. This remote moire potential gives rise to pronounced satellite resistance peaks besides the charge-neutrality point in graphene,…
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Taxonomy
TopicsAcoustic Wave Resonator Technologies · Ferroelectric and Piezoelectric Materials · Material Properties and Applications
