Simulating a Chern Insulator with C = $\pm$2 on Synthetic Floquet Lattice
Lingxiao Lei, Weichen Wang, Guangyao Huang, Shun Hu, Xi Cao, Xinfang, Zhang, Mingtang Deng, and Pingxing Chen

TL;DR
This paper proposes a 4-band Floquet lattice model to simulate a Chern insulator with Chern number ±2, extending topological measurement methods and demonstrating potential for quantum simulation of complex topological phases.
Contribution
It introduces a novel 4-band Floquet lattice model for Chern insulators with C=±2 and adapts measurement techniques to verify topological properties.
Findings
Successfully simulated Chern number ±2 in Floquet lattice
Validated phase diagram with numerical simulations
Demonstrated potential for quantum topological matter simulation
Abstract
The synthetic Floquet lattice, generated by multiple strong drives with mutually incommensurate frequencies, provides a powerful platform for the quantum simulation of topological phenomena. In this study, we propose a 4-band tight-binding model of the Chern insulator with a Chern number C = 2 by coupling two layers of the half-BHZ lattice and subsequently mapping it onto the Floquet lattice to simulate its topological properties. To determine the Chern number of our Floquet-version model, we extend the energy pumping method proposed by Martin et al. [Phys. Rev. X 7, 041008 (2017)] and the topological oscillation method introduced by Boyers et al. [Phys. Rev. Lett. 125, 160505 (2020)], followed by numerical simulations for both methodologies. The simulation results demonstrate the successful extraction of the Chern number using either of these methods, providing an excellent…
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