Characterization of the ELM-free Negative Triangularity Edge on DIII-D
A.O. Nelson, L. Schmitz, T. Cote, J.F. Parisi, S. Stewart, C., Paz-Soldan, K.E. Thome, M.E. Austin, F. Scotti, J.L. Barr, A. Hyatt, N., Leuthold, A. Marinoni, T. Neiser, T. Osborne, N. Richner, A.S. Welander, W.P., Wehner, R. Wilcox, T.M. Wilks, J. Yang

TL;DR
This study characterizes the unique edge behavior of negative triangularity plasmas in DIII-D, revealing their inherent ELM-free operation, stability limits, and potential advantages for fusion reactors due to their stable edge conditions.
Contribution
It provides the first comprehensive analysis of negative triangularity edge behavior on DIII-D, identifying critical triangularity thresholds and stability properties relevant for fusion reactor design.
Findings
Negative triangularity plasmas are inherently ELM-free at sufficient negativity.
A critical triangularity of about -0.15 marks the transition to ELM-free operation.
NT plasmas support small, steep-pressure-gradient pedestals with high core performance.
Abstract
Tokamak plasmas with strong negative triangularity (NT) shaping typically exhibit fundamentally different edge behavior than conventional L-mode or H-mode plasmas. Over the entire DIII-D database, plasmas with sufficiently negative triangularity are found to be inherently free of edge localized modes (ELMs), even at injected powers well above the predicted L-H power threshold. A critical triangularly (), consistent with inherently ELM-free operation is identified, beyond which access to the second stability region for infinite- ballooning modes closes on DIII-D. It is also possible to close access to this region, and thereby prevent an H-mode transition, at weaker average triangularities () provided that at least one of the two x-points is still sufficiently negative. Enhanced low field side magnetic fluctuations…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsSemiconductor materials and devices · GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies
