Hyper-doping of Silicon for Plasmonics in the Telecommunication Range

TL;DR

This paper demonstrates that hyper-doped silicon can be engineered to support plasmonic resonances in the telecommunication wavelength range, enabling CMOS-compatible nanophotonic devices.

Contribution

It introduces a novel hyper-doping process for silicon that achieves high dopant concentrations suitable for near-infrared plasmonics, including a fabrication method for hyper-doped silicon nanoparticles.

Findings

Achieved plasma wavelength around 1.5 μm for dopant concentrations >4 at.%

Extracted complex refractive index data indicating plasmonic potential

Proposed fabrication process for hyper-doped silicon nanoparticles

Abstract

We investigate hyper-doping, a promising approach to introduce a high concentration of impurities into silicon beyond its solid solubility limit, for its potential applications in near-infrared plasmonics. We systematically explore the incorporation of dopants into silicon using ion implantation and pulsed laser melting annealing processes. Reflectance spectra analysis shows an achievable plasma wavelength of around 1.5 $\mu$m for dopant concentrations exceeding 4 at.%. Complex refractive index data for the doped silicon samples are extracted, revealing their potential for near-infrared plasmonic applications. Moreover, we propose a fabrication process that allows for the creation of hyper-doped silicon nanoparticles without the need for additional masking steps. Our research paves the way for designing CMOS-compatible plasmonic nanostructures operating in the telecommunication wavelength range. The study's findings offer significant insights into the utilization of hyper-doped silicon for advanced photonic and optoelectronic applications.