Temperature Dependence of Electron Viscosity in Superballistic GaAs Point Contacts
Daniil I. Sarypov, Dmitriy A. Pokhabov, Arthur G. Pogosov, Evgeny Yu., Zhdanov, Andrey A. Shevyrin, Askhat K. Bakarov, Alexander A. Shklyaev

TL;DR
This study investigates how electron viscosity in GaAs point contacts varies with temperature and substrate suspension, revealing hydrodynamic behavior and enhanced electron-electron interactions in suspended structures.
Contribution
It provides experimental evidence of temperature-dependent electron viscosity and superballistic conductance in GaAs point contacts, highlighting the effects of substrate suspension on electron interactions.
Findings
Viscosity follows 1/T^2 law at low T
Viscosity follows 1/T law at higher T
Suspended PCs show reduced viscosity across all temperatures
Abstract
Electron transport in suspended and non-suspended GaAs point contacts (PCs) of different widths is experimentally studied. The superballistic contribution to the conductance, that demonstrates a distinctive quadratic dependence on the PC width and temperature growth, is extracted from the experiment. The studied PCs are shown to be described in the framework of hydrodynamic electron flow a in wide temperature range. At low temperatures, , the viscosity is found out to obey the law expected for 2D systems, while at higher temperatures it has the dependence . Similar measurements performed after the suspension of PCs, i.e. their separation from substrate, show that the electron viscosity reduces in the whole temperature range, that indicates an enhanced electron-electron interaction in suspended structures.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Semiconductor materials and interfaces
