Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices

TL;DR

This study investigates the spin Hall magnetoresistance in Pt/(Ga,Mn)N devices to evaluate interface transparency and spin transfer efficiency, revealing promising properties for spintronic applications above the Curie temperature.

Contribution

It provides the first measurement of SMR in Pt/(Ga,Mn)N, estimating the spin mixing conductance and demonstrating magnetic ordering above the Curie temperature for spintronic device potential.

Findings

Interface transparency comparable to YIG/Pt interfaces.

SMR observed above the Curie temperature, enabling broader temperature operation.

Estimated spin mixing conductance of $2.6\times 10^{14} \Omega^{-1} m^{-2}$.

Abstract

Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of developing advanced spintronic devices which are fully compatible with the current industrial procedures. Despite this interest, there remains a need to investigate the spintronic parameters that characterize interfaces within these systems. Here, we perform spin Hall magnetoresistance (SMR) measurements to evaluate the spin transfer at a Pt/(Ga,Mn)N interface. We determine the transparency of the interface through the estimation of the real part of the spin mixing conductance finding $G_r = 2.6\times 10^{14} \, \Omega^{-1} m^{-2}$, comparable to state-of-the-art yttrium iron garnet (YIG)/Pt interfaces. Moreover, the magnetic ordering probed by SMR above the (Ga,Mn)N Curie temperature TC provides a broader temperature range for the efficient generation and detection of spin currents, relaxing the conditions for this material to be applied in new spintronic devices.