Magnetization dynamics in skyrmions due to high-speed carrier injections from Dirac half-metals

TL;DR

This paper explores how high-speed carrier injections from Dirac half-metals can manipulate skyrmion magnetization states, enabling potential applications in magnetic storage and spintronics through controlled topological state changes.

Contribution

It introduces a novel mechanism using spin-polarized electrons from topological ferromagnets to dynamically control skyrmion topological states via an effective magnetic field.

Findings

Electron injection can create or destroy skyrmions.

Controlled torques enable writing and erasing bits.

Potential for scalable skyrmion-based data storage.

Abstract

Recent developments in the magnetization dynamics in spin textures, particularly skyrmions, offer promising new directions for magnetic storage technologies and spintronics. Skyrmions, characterized by their topological protection and efficient mobility at low current density, are increasingly recognized for their potential applications in next-generation logic and memory devices. This study investigates the dynamics of skyrmion magnetization, focusing on the manipulation of their topological states as a basis for bitwise data storage through a modified Landau-Lifshitz-Gilbert equation (LLG). We introduce spin-polarized electrons from a topological ferromagnet that induce an electric dipole moment that interacts with the electric gauge field within the skyrmion domain. This interaction creates an effective magnetic field that results in a torque that can dynamically change the topological state of the skyrmion. In particular, we show that these torques can selectively destroy and create skyrmions, effectively writing and erasing bits, highlighting the potential of using controlled electron injection for robust and scalable skyrmion-based data storage solutions.