Imaging Localized Variable Capacitance During Switching Processes in Silicon Diodes by Time-Resolved Electron Holography

TL;DR

This study employs time-resolved electron holography with Interference Gating to visualize and analyze the local electric potential dynamics in silicon diodes during switching, revealing different capacitance behaviors at nanosecond resolution.

Contribution

First application of iGate for imaging local potential changes in silicon diodes during switching, demonstrating its effectiveness for localized dynamic potentiometry.

Findings

Ultrafast imaging of capacitance decrease in UG1A diode with reverse bias.

Observation of MOSCAP-like behavior in modified 1N4007 diode.

Detection of effective setup capacitance effects outside the devices.

Abstract

Interference Gating or iGate is a unique method for ultrafast time-resolved electron holography in a transmission electron microscope enabling a spatiotemporal resolution in the nm and ns regime with a minimal technological effort. Here, iGate is used for the first image-based investigation of the local dynamics of the projected electric potential in the area of the space charge region of two different general purpose silicon diodes during switching between unbiased and reverse biased condition with a temporal resolution of 25ns at a repetition rate of 3MHz. The obtained results for a focus-ion-beam-prepared ultrafast UG1A rectifier diode, which shows a decreasing capacitance with increasing reverse bias are in good agreement with an electric characterization of the macroscopic device as well as with theoretical expectations. For a severely modified 1N4007 device, however, time-resolved electron holography revealed a MOSCAP-like behavior with a rising capacitance in the area of the space charge region during the switching into reverse biased condition. Remarkably, a different behavior, dominated by the effective capacitance of the electrical setup, can be observed in the vacuum region outside both devices within the same measurements, clearly showing the benefits of localized dynamic potentiometry.