Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices

TL;DR

This study investigates the pressure-driven Mott transition in ultrathin Cr-doped V2O3 films, demonstrating consistent transition behavior despite structural deviations and assessing variability effects on device scaling down to 50 nm.

Contribution

It provides a comprehensive electrical and simulation analysis of the Mott transition in ultrathin doped V2O3 films, highlighting the potential for device miniaturization.

Findings

Resistivity changes by nearly two orders of magnitude at 2% doping.

Transition behavior remains consistent despite structural deviations.

Device scaling down to 50 nm is feasible considering grain variability.

Abstract

The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5% and 15%. A change in resistivity of nearly two orders of magnitude is found for 2% doping. A simulation model based on a scaling law description of the phase transition and percolative behavior in a resistor lattice is developed. This is used to show that despite significant deviations in the film structure from single crystals, the transition behavior is very similar. Finally, the influence of the variability between grains on the characteristics of scaled devices is investigated and found to allow for scaling down to at least 50 nm device width.