Optical transition parameters of the silicon T centre

TL;DR

This paper models the optical and spin properties of the silicon T centre, providing key parameters and new measurements to advance its application in quantum technologies.

Contribution

It introduces a Hamiltonian model for the T centre's optical transition and provides the first electrically tuned emission measurements.

Findings

Resolved ambiguous defect potential values.

Presented the first electrically tuned T centre emission.

Developed a comprehensive model under external fields.

Abstract

The silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. In this paper we present a Hamiltonian of the T centre TX state and determine key parameters of the optical transition from T$_0$ to TX$_0$ from a combined analysis of published results, density functional theory, and new spectroscopy. We resolve ambiguous values of the internal defect potential in the literature, and we present the first measurements of electrically tuned T centre emission. As a result, we provide a model of the T centre's optical and spin properties under strain, electric, and magnetic fields that can be utilized for realizing quantum technologies.