Quasiparticle and Excitonic Structures of Few-layer and Bulk GaSe: Interlayer Coupling, Self-energy, and Electron-hole Interaction
Fanhao Jia, Zhao Tang, Greis J. Cruz, Weiwei Gao, Shaowen Xu, Wei Ren,, Peihong Zhang

TL;DR
This study uses advanced computational methods to analyze how layer thickness influences the electronic and optical properties of GaSe, revealing the roles of interlayer coupling and excitonic effects in its behavior.
Contribution
It provides a systematic GW-BSE analysis of layer-dependent properties of GaSe, clarifying discrepancies between experiments and elucidating exciton behavior across different thicknesses.
Findings
Interlayer coupling suppresses Mexican-hat dispersion in valence bands.
Exciton binding energies correlate with wave function spread.
Results align well with experimental data after including quasiparticle and excitonic effects.
Abstract
Metal monochalcogenide GaSe is a classic layered semiconductor that has received increasing research interest due to its highly tunable electronic and optical properties for ultrathin electronics applications. Despite intense research efforts, a systematic understanding of the layer-dependent electronic and optical properties of GaSe remains to be established, and there appear significant discrepancies between different experiments. We have performed GW plus Bethe-Salpeter equation (BSE) calculations for few-layer and bulk GaSe, aiming at understanding the effects of interlayer coupling and dielectric screening on excited state properties of GaSe, and how the electronic and optical properties evolve from strongly two-dimensional (2D) like to intermediate thick layers, and to three-dimensional (3D) bulk character. Using a new definition of the exciton binding energy, we are able to…
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