Exploring Topological Transport in Pt$_2$HgSe$_3$ Nanoribbons: Insights for Spintronic Device Integration

TL;DR

This study investigates the electronic transport in Pt$_2$HgSe$_3$ nanoribbons, revealing their potential for spintronic devices due to their small edge state penetration depth and robust topological transport properties even with defects.

Contribution

The paper provides the first theoretical analysis of topological transport in Pt$_2$HgSe$_3$ nanoribbons, highlighting their suitability for narrow ribbon applications in spintronics.

Findings

Edge states have a penetration depth of about 0.9 nm.

Localization lengths can exceed micrometers in narrow ribbons.

Topological transport persists despite defect scattering.

Abstract

The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system, Pt$_2$HgSe$_3$ nanoribbons. By an ab initio approach, we found that the edge states present a penetration depth of about $0.9$\,{nm}, which is much smaller than those predicted in other 2D topological systems. Thus, suggesting that Pt$_2$HgSe$_3$ allows the exploitation of topological transport properties in narrow ribbons. Using non-equilibrium Green's functions calculations, we have examined the electron conductivity upon the presence of Se\,$\leftrightarrow$\,Hg antistructure defects randomly distributed in the Pt$_2$HgSe$_3$ scattering region. By considering scattering lengths up to $109$\,nm, we found localization lengths that can surpass $\mu$m sizes for narrow nanoribbons ($<9$\,nm). These findings can contribute to further understanding the behavior of topological insulators under realistic conditions and their integration within electronic, spintronic devices.