NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state

TL;DR

This study reveals that NO2 from air selectively adsorbs on GaN surfaces, affecting its electronic properties and surface states, and that mild vacuum heat treatment can restore the surface to its intrinsic state, offering potential solutions for device stability.

Contribution

It demonstrates the role of NO2 in charge trapping on GaN surfaces and shows that vacuum heat treatment can reverse this effect, providing new insights into surface charge management.

Findings

NO2 selectively adsorbs on GaN surface from air.

Heat treatment in vacuum removes NO2-induced surface charge.

Re-exposure to air restores the surface charge state.

Abstract

Trapping of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of this charge originates in molecules adsorbed on the GaN surface. Multiple studies have addressed the adsorption of different substances, but the role of adsorbents in the charge-trapping mechanism remains unclear. Here, we show that the GaN surface selectively adsorbs nitrogen dioxide (NO2) existing in the air in trace amounts. NO2 appears to charge the yellow-luminescence-related surface state. Mild heat treatment in vacuum removes this surface charge, only to be re-absorbed on re-exposure to air. Selective exposure of vacuum-annealed GaN to NO2 reproduces a similar surface charge distribution, as does the exposure to air. Residual gas analysis of the gases desorbed during heat treatment in vacuum shows a large concentration of nitric oxide (NO) released from the surface. These observations suggest that NO2 is selectively adsorbed from the air, deleteriously affecting the electrical properties of air-exposed GaN. The trapping of free electrons as part of the NO2chemisorption process changes the surface charge density, resulting in a change in the surface band bending. Uncontrollable by nature, NO2 adsorption may significantly affect any GaN-based electronic device. However, as shown here, a rather mild heat treatment in vacuum restores the surface state occupancy of GaN to its intrinsic state. If attempted before passivation, this heat treatment may provide a possible solution to longstanding stability problems associated with surface charge trapping in GaN-based devices.