Gate Tunable Asymmetric Ozone Adsorption on Graphene

TL;DR

This study demonstrates gate-tunable asymmetric ozone adsorption on graphene at cryogenic temperatures, revealing strong ozone-graphene interactions and potential for material and device modulation in quantum technologies.

Contribution

It introduces the first observation of gate-dependent asymmetric ozone adsorption on graphene, advancing understanding of physisorption in quantum material applications.

Findings

Significant hole doping from ozone adsorption.

Adsorption asymmetry with positive and negative gate voltages.

Gate tunability enables control over ozone-graphene interactions.

Abstract

Molecular adsorption is pivotal in device fabrication and material synthesis for quantum technology. However, elucidating the behavior of physisorption poses technical challenges. Here graphene with ultrahigh sensitivity was utilized to detect ozone adsorption at cryogenic temperatures. Significant hole doping observed in graphene indicates a strong interaction between ozone and graphene. Interestingly, the adsorption exhibits asymmetry with positive and negative gate voltages. The strong affinity of ozone provides a tool to modulate materials and devices, while the gate tunability of adsorption offers new insights into construction and manipulation of oxide quantum materials.