Optical contrast analysis of {\alpha}-RuCl$_3$ nanoflakes on oxidized silicon wafers
Tatyana V. Ivanova, Daniel Andres-Penares, Yiping Wang, Jiaqiang Yan,, Daniel Forbes, Servet Ozdemir, Kenneth S. Burch, Brian D. Gerardot, Mauro, Brotons-Gisbert

TL;DR
This study demonstrates that optical contrast imaging, combined with spectroscopic measurements and simulations, provides a fast, non-invasive, and accurate method to determine the thickness of { extalpha}-RuCl$_3$ nanoflakes on silicon wafers.
Contribution
The paper introduces a systematic approach to quantify { extalpha}-RuCl$_3$ nanoflake thickness using optical contrast and spectroscopic ellipsometry, validated by simulations and experimental data.
Findings
Optical contrast correlates well with nanoflake thickness below 100 nm.
Spectroscopic ellipsometry accurately characterizes the refractive index of { extalpha}-RuCl$_3$.
Thickness estimation via optical contrast has a mean deviation of -0.2 nm with a 1 nm standard deviation.
Abstract
{\alpha}-RuCl, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of {\alpha}-RuCl nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of {\alpha}-RuCl nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of {\alpha}-RuCl nanoflakes with thicknesses below 100 nm on SiO/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from…
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