Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

TL;DR

This paper presents a novel atomic layer etching process for SiO$_2$ using sequential TMA and plasma exposures, achieving surface smoothing and high etch rates, with potential to improve photonic device quality factors.

Contribution

The study introduces a compatible ALE process for SiO$_2$ that effectively reduces surface roughness and achieves high etch rates, advancing surface smoothing techniques for optical applications.

Findings

Surface roughness decreased by 62% after etching.

Etch rates up to 0.58 Å per cycle for thermally-grown SiO$_2$.

Residual Al and F concentrations around 1-2%.

Abstract

On-chip photonic devices based on SiO$_2$ are of interest for applications such as microresonator gyroscopes and microwave sources. Although SiO$_2$ microdisk resonators have achieved quality factors exceeding one billion, this value remains an order of magnitude less than the intrinsic limit due to surface roughness scattering. Atomic layer etching (ALE) has potential to mitigate this scattering because of its ability to smooth surfaces to sub-nanometer length scales. While isotropic ALE processes for SiO$_2$ have been reported, they are not generally compatible with commercial reactors, and the effect on surface roughness has not been studied. Here, we report an ALE process for SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ (trimethylaluminum, TMA) and Ar/H$_2$/SF$_6$ plasma. We find that each process step is self-limiting, and that the overall process exhibits a synergy of 100%. We observe etch rates up to 0.58 \r{A} per cycle for thermally-grown SiO$_2$ and higher rates for ALD, PECVD, and sputtered SiO$_2$ up to 2.38 \r{A} per cycle. Furthermore, we observe a decrease in surface roughness by 62% on a roughened film. The residual concentration of Al and F is around 1-2%, which can be further decreased by O$_2$ plasma treatment. This process could find applications in smoothing of SiO$_2$ optical devices and thereby enabling device quality factors to approach limits set by intrinsic dissipation.